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Production of ferroelectric hafnium oxide films by magnetron sputtering
- Authors: Luzanov V.A.1
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Affiliations:
- Fryazino Branch Kotelnikov Institute of Radioengineering and Electronics of RAS
- Issue: Vol 69, No 10 (2024)
- Pages: 1000-1003
- Section: НАНОЭЛЕКТРОНИКА
- URL: https://cardiosomatics.orscience.ru/0033-8494/article/view/684753
- DOI: https://doi.org/10.31857/S0033849424100106
- EDN: https://elibrary.ru/HPSBDR
- ID: 684753
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Abstract
Hafnium oxide films containing a non-centrosymmetric orthorhombic phase capable of spontaneous polarization were obtained by magnetron sputtering. It was shown that the presence of bombardment with negative oxygen ions promotes the formation of the orthorhombic phase.
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About the authors
V. A. Luzanov
Fryazino Branch Kotelnikov Institute of Radioengineering and Electronics of RAS
Author for correspondence.
Email: valery@luzanov.ru
Russian Federation, Vvedenskii Squar. 1, Fryazino, Moscow Region, 141190
References
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Supplementary files
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Fig. 1. X-ray diffraction pattern of HfO2 film deposited using a standard planar magnetron.
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Fig. 2. X-ray diffractogram of HfO2 film deposited using the original magnetron sputtering device: arrows indicate monoclinic (m) and orthorhombic (o) phases.
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